Characterization of tunnel-barriers in polycrystalline Si point-contact single-electron transistors
نویسندگان
چکیده
1 Hitachi Cambridge Laboratory, Hitachi Europe Ltd., Madingley Road, Cambridge, CB3 0HE, UK 2 Microelectronics Research Centre, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK 3 Dept. of Electronics and Information Systems, Osaka University, 2-1, Suita, Yamada-oka, Osaka, Japan CREST, JST (Japan Science and Technology) * TEL : +44 1223 467944, FAX :+44 1223 467942, E-mail : [email protected]
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